> For the complete documentation index, see [llms.txt](https://anufrievroman.gitbook.io/freepaths/llms.txt). Markdown versions of documentation pages are available by appending `.md` to page URLs; this page is available as [Markdown](https://anufrievroman.gitbook.io/freepaths/theory/electrical-conductivity.md).

# Electrical conductivity

The goal is to compute the thermoelectric transport coefficients of a nanostructured material by solving the Boltzmann transport equation (BTE). In steady state and under the relaxation time approximation (RTA), the BTE reduces to:

$$
\mathbf{v} \cdot \nabla\_r f = -\frac{f - f\_0}{\tau(E)}
$$

where $$f$$ is the non-equilibrium carrier distribution, $$f\_0$$ is the equilibrium Fermi–Dirac distribution, $$\mathbf{v}$$ is the carrier group velocity, and $$\tau(E)$$ is the energy-dependent relaxation time.

### Monte Carlo approach

Instead of solving the BTE analytically, FreePATHS solves it stochastically. Electrons are injected one by one from the hot side and traced through the structure until they either exit from the cold side or are scattered back. Only electrons that reach the cold side contribute to the flux. The average time of flight $$\langle ToF(E) \rangle$$ is the mean time those electrons take to cross the structure at a given energy:

$$
\langle ToF(E) \rangle = \frac{\sum\_r t\_r(E)}{N\_r(E)}
$$

where the sum runs over the $$N\_r(E)$$ electrons that successfully reach the cold side. The flux per simulated electron at each energy is then:

$$
F(E) = \frac{1}{\langle ToF(E) \rangle}
$$

### Transport distribution function

From the flux, the transport distribution function (TDF) is formed:

$$
\Xi(E) = C \times F(E) \times g(E)
$$

where $$g(E)$$ is the 3D parabolic-band density of states and $$C$$ is the mapping constant described below.

### Transport coefficients

All thermoelectric transport coefficients are computed as integrals of the TDF weighted by the Fermi–Dirac derivative $$(-\partial f / \partial E)$$, and are output as a function of the Fermi energy $$E\_f$$:

**Electrical conductivity:**

$$
\sigma = q^2 \int \Xi(E) \left(-\frac{\partial f}{\partial E}\right) dE
$$

**Seebeck coefficient:**

$$
S = \frac{qk\_B}{\sigma} \int \Xi(E) \left(-\frac{\partial f}{\partial E}\right) \left(\frac{E - E\_f}{k\_BT}\right) dE
$$

**Power factor:**

$$
PF = \sigma S^2
$$

**Electronic thermal conductivity:**

$$
\kappa\_{el} = \frac{1}{T} \int \Xi(E) \left(-\frac{\partial f}{\partial E}\right)(E - E\_f)^2 , dE - \sigma S^2 T
$$

These are computed as a function of $$E\_f$$ and saved as PDF plots and CSV files (`Electron conductivity.pdf`, `Seebeck coefficient.pdf`, `Power factor.pdf`, `Electron thermal conductivity.pdf`). The value at the material's Fermi level is also marked on each plot.

### Mapping constant C

C is a calibration constant that bridges the MC simulation output to physically meaningful units. The MC simulation produces raw time-of-flight values, which do not carry the correct dimensions or scale to be used directly as a TDF. C corrects for this.

C is defined as the ratio of the analytical BTE conductivity for the pristine bulk material to the raw MC-derived conductivity for the same pristine material:

$$
C = \frac{\sigma\_\mathrm{BTE}}{\sigma\_\mathrm{MC,,raw}}
$$

where the analytical (bulk) conductivity in the numerator is computed from:

$$
\Xi\_\mathrm{bulk}(E) = \Lambda \cdot v(E) \cdot g(E)
$$

with $$\Lambda$$ the bulk electron mean free path, $$v(E) = \sqrt{2E/m^\*}$$ the group velocity, and $$g(E)$$ the 3D density of states. This is the exact BTE result for a pristine crystal with acoustic phonon scattering only. The denominator is the conductivity obtained from the MC simulation of the same pristine structure.

Once C is determined this way, it is kept fixed and reused for any nanostructured geometry. The nanostructuring effect then appears entirely through the change in the simulated travel times, not through C.

**Important:** C must be calibrated on a pristine simulation (no holes or scatterers). See the [MEAN\_MAPPING\_CONSTANT parameter](/freepaths/getting-started/config-file-creation-guide.md#electron-parameters) for the required two-step workflow.

### References

1. Priyadarshi and Neophytou, [J. Appl. Phys. 133, 054301 (2023)](https://doi.org/10.1063/5.0134466)


---

# Agent Instructions
This documentation is published with GitBook. GitBook is the documentation platform designed so that both humans and AI agents can read, navigate, and reason over technical content effectively. Learn more at gitbook.com.

## Querying This Documentation
If you need additional information that is not directly available in this page, you can query the documentation dynamically by asking a question.

Perform an HTTP GET request on the current page URL with the `ask` query parameter, and the optional `goal` query parameter:

```
GET https://anufrievroman.gitbook.io/freepaths/theory/electrical-conductivity.md?ask=<question>&goal=<endgoal>
```

`ask` is the immediate question: it should be specific, self-contained, and written in natural language.
`goal` is optional and describes the broader end goal you are ultimately trying to accomplish on behalf of the user. GitBook uses it to tailor the answer towards what is most useful for that goal.

The response will contain a direct answer to the question and relevant excerpts and sources from the documentation.

Use this mechanism when the answer is not explicitly present in the current page, you need clarification or additional context, or you want to retrieve related documentation sections.
